Description
- Specifications:
- Polarity: NPN (Negative-Positive-Negative)
- Collector-Base Voltage (V_CBO): 80V
- Collector-Emitter Voltage (V_CEO): 80V
- Emitter-Base Voltage (V_EBO): 5V
- Collector Current (I_C): 1.5A (max)
- Power Dissipation (P_tot): 12.5W
- Transition Frequency (f_T): 40MHz (typical)
- Description:
- The BD139 is an NPN bipolar junction transistor (BJT) widely used in amplifier and switching circuits due to its high current rating and low saturation voltage characteristics.
- With a maximum collector current (I_C) rating of 1.5A, the BD139 is suitable for various applications requiring moderate power handling capabilities, including audio amplifier stages, power switching circuits, and voltage regulation circuits.
- Featuring low saturation voltage and high current gain (h_FE) characteristics, this transistor ensures efficient signal amplification and minimal power loss in amplifier designs and other power switching applications.
- The BD139 is housed in a TO-126 package, providing easy integration into electronic assemblies and PCB layouts, with suitable thermal and electrical characteristics for reliable operation in diverse operating environments.
- Whether used in hobbyist projects, educational activities, or commercial products, the BD139 transistor offers dependable performance and versatility in various amplifier and switching applications.
